Physical and Electrical Properties of MOCVD Grown HfZrO_4 High-k Thin Films Deposited in a Production-Worthy 300 mm Deposition System

摘要

This work presents a detailed investigation of physical and electrical properties of HfZrO_4 thin films deposited by metallorganic chemical vapor deposition in a production-worthy 300 mm deposition system at a wafer temperature of either 380℃ or 480℃. The HfZrO_4 growth rate was observed to be the same for both deposition temperatures. An increase in film density and decrease in film impurities with increasing temperature was also corroborated by improved Quantox measured leakage as well as increase in metal coverage rates. HfZrO_4 was compared with HfO_2 deposited at the same deposition conditions in MOS capacitor structures. A boost in k value was observed for HfZrO_4 (k_(HfZrO_4)=33.6) compared to HfO_2 (k_(HfO_2)=16.1) at the expense of increased interfacial EOT. Additionally, in our deposition system an excellent HfZrO_4 wafer-to-wafer repeatability (0.86%) was observed for a mean thickness of 19 A over a 50 wafer run.