MOCVD SELECTIVE DEPOSITION OF C-AXIAL PB5GE3O11 THIN FILM ON HIGH-K GATE OXIDE

摘要

PPROBLEM TO BE SOLVED: To provide a method of selective deposition of a C-axial PGO thin film on a High-k gate oxide. PSOLUTION: The method of forming a PGO film on a High-k dielectric comprises steps of: preparing a silicon substrate including a step of forming a High-k gate oxide layer on the silicon substrate; patterning the High-k gate oxide; at first annealing the substrate for the first time; placing the substrate in an MOCVD chamber; depositing a PGO film by injecting a precursor of the PGO into the MOCVD chamber, and secondarily annealing the system of the PGO film on the High-k gate oxide. PCOPYRIGHT: (C)2005,JPO&NCIPI