Effect of Hafnium Oxide on ALD Grown ZnO Thin Film Transistor

机译：氧化Ha对ALD生长的ZnO薄膜晶体管的影响

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The TFTs from ZnO semiconductor with hafnium oxide dielectrics were prepared by atomic layer deposition to characterize the electrical properties. Good electrical properties of oxide TFT was obtained with channel mobility of 2.1 cm~2/Vs, threshold voltage of 0 V, the subthreshold slope of 0.9 V/dec, and on to off current ratio of 10~6.

机译：通过原子层沉积制备具有氧化ha电介质的ZnO半导体TFT，以表征电性能。氧化物TFT具有良好的电学性能，其沟道迁移率为2.1 cm〜2 / Vs，阈值电压为0 V，亚阈值斜率为0.9 V / dec，开/关电流比为10〜6。

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来源
《IMID/IDMC/ASIA DISPLAY 2008;International display manufacturing conference 2008;International meeting on information display;Asia display 2008 》|2008年|p.211-213|共3页
会议地点 Ilsan(KR);Ilsan(KR);Ilsan(KR);Ilsan(KR)
作者
Woon-Seop Choi;
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作者单位

School of Display Engineering, Hoseo University, Asan-City, Chungnam 336-795, Korea TEL:82-41-540-5924, e-mail: wschoi@hoseo.edu;

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会议组织
原文格式 PDF
正文语种 eng
中图分类显示技术 ; 显示设备、显示器 ;
关键词
oxide TFT; ZnO; hafnium oxide; ALD;

机译：氧化物TFT；氧化锌;氧化原子层沉积;

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专利

1. ALD of hafnium dioxide thin films using the new alkoxide precursor hafnium 3-methyl-3-pentoxide, Hf(mp)(4) [J] . Cho W, An KS, Chung TM, Chemical vapor deposition: CVD . 2006 ,第11期

机译：使用新的醇盐前体3-甲基-3-五氧化H Hf（mp）（4）的二氧化ha薄膜的ALD
2. High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates [J] . Rezk Ayman, Saadat Irfan IEEE Electron Device Letters . 2019 ,第2期

机译：柔性衬底上生长的高性能ALD铝掺杂ZnO薄膜晶体管
3. Improvement in Sensing Responses to Ammonia Gas for Gas Sensors With Separately Designed Sensing Element Using ALD-Grown ZnO Nanoparticles and Read-Out Element of Top-Gate In-Ga-Zn-O Thin-Film Transistor [J] . Da-Jeong Yun, Gi-Ho Seo, Won-Ho Lee, Electron Devices, IEEE Transactions on . 2017 ,第5期

机译：使用ALD生长的ZnO纳米粒子和顶部栅极In-Ga-Zn-O薄膜晶体管的读出元件分别设计的传感元件，改善了气体传感器对氨气的传感响应。
4. Effect of Hafnium Oxide on ALD Grown ZnO Thin Film Transistor [C] . Asia display . 2008

机译：铪氧化氮对ALD种植ZnO薄膜晶体管的影响
5. Characterization of hafnium based high-k thin films for solid state transistor gate application deposited by CVD and PECVD using hafnium(IV) tert-butoxide. [D] . Bhandari, Harish Babu. 2006

机译：使用叔丁醇ha（IV）通过CVD和PECVD沉积的固态晶体管栅极应用的based基高k薄膜的特性表征。
6. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library [O] . Andrei Ionut Mardare, Alfred Ludwig, Alan Savan, 2014

机译：a-钽-钛薄膜库上生长的阳极氧化物的性质
7. Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors [O] . Aleksandra Seweryn, Rafal Pietruszka, Bartlomiej S. Witkowski, 2019

机译：用水或臭氧生长的ZnO薄膜的结构和电气参数作为氧前体

Effect of Hafnium Oxide on ALD Grown ZnO Thin Film Transistor

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