A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

摘要

Making embedded memory symmetric provides the capability of memory access in both rows and columns, which brings new opportunities of significant energy and time savings if only a portion of data in the words need to be accessed. This work investigates the use of ferroelectric field-effect transistors (FeFETs), an emerging nonvolatile, low-power, deeply-scalable, CMOS-compatible transistor technology, and proposes a new 3transistor/cell symmetric nonvolatile memory (SymNVM). With $sim 1.67mathrm{x}$ higher density as compared with the prior FeFET design, significant benefits of energy and latency improvement have been achieved, as evaluated and discussed in depth in this paper.