Nitrogen Delta Doping in 4H-SiC Epilayers

摘要

Buried nitrogen 5-doped SiC 4H epitaxial layers have been grown in a horizontal hot-wall chemical vapor deposition reactor. The history of the growth parameters was recorded. Secondary ion mass spectrometry (SIMS) and Capacitance-Voltage (CV) were carried out to investigate the nitrogen doping distribution. Evaluation of the growth rate as a function of the time is determined with emphasis on the beginning of the growth when a transient of the growth rate is observed.