A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

摘要

DC and RF measurements for MESFET devices fabricated on three different 4H-SiC Semi-Insulating (SI) substrates are compared in this paper and the epilayers were grown simultaneously for all three wafers. The different wafers were processed during the same batch run. The MESFETs processed on the high-purity wafers showed less light sensitivity than those processed on the Vanadium doped wafer.