INTEGRATED CIRCUIT INCLUDING IN PARTICULAR A MESFET PROTECTED AGAINST LEAKAGE CURRENTS, ON A SEMI-INSULATING SUBSTRATE

摘要

P An integrated circuit comprises a semi-insulating semiconductor substrate 21; a p ** + 28 buried layer; drain and source regions 25, 26 of type n ** +; a gate electrode 24 covering a channel layer 22; and a p ** - 27 region, formed only under the channel layer. The buried layer 28 completely surrounds the drain and source regions. This structure improves immunity to fugitive errors resulting from exposure to alpha radiation. /P