Whole-chip ESD protection scheme for CMOS mixed-mode IC's indeep-submicron CMOS technology

摘要

A whole-chip ESD protection scheme with the ESD-connection diodesnand a substrate-triggering field-oxide device (STFOD) are proposed tonprotect mixed-mode CMOS IC's against ESD damage. The STFOD is triggerednon by the substrate-triggering technique to make an area-efficientnVDD-to-VSS ESD clamp circuit. The ESD-connection diodes provide thencurrent discharging paths among the multiple separated power lines tonavoid the ESD damage located at the digital-analog interface. Thisnwhole-chip ESD protection scheme has been practically verified in annL-bits DAC chip in a 0.6-μm CMOS process with a pin-to-pin ESDnrobustness of above 4 KV