Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability

机译：优化单个Halo p-MOSFET注入参数以提高模拟性能和可靠性

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The effect of Channel Hot Carrier (CHC) stress under typical analog operating conditions is studied for p-MOSFETs. Our detailed characterization results show that Single Halo devices not only show improved performance, but also are immune to CHC degradation under various operating conditions.

机译：对于p-MOSFET，研究了典型模拟工作条件下的沟道热载流子（CHC）应力的影响。我们详细的表征结果表明，Single Halo器件不仅显示出改进的性能，而且在各种操作条件下均不受CHC降解的影响。

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来源
《32nd European Solid-State Device Research Conference (ESSDERC 2002), Sep 24-26, 2002, Firenze, Italy》|2002年|p.603-606|共4页
会议地点 Firenze Italy
作者
Neeraj K. Jha; V. Ramgopal Rao; J.C.S.Woo;
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作者单位

Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai- 400 076 INDIA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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入库时间 2022-08-26 13:53:36

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Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability

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