Mid-IR emission/absorption from GaN-based heterostructures

摘要

We present results on the mid-infrared emission of violet, blue, and green InGaN light-emitting diodes and the intersubband absorption of AlGaN-based quantum cascade structures. For the light emitting diodes, we found that the diode with the highest In composition in the active region had the shortest mid-infrared emission wavelength and vice versa.