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机译:GaN的异质结构的太赫兹发射光谱
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan Energy Science and Technology Department Graduate School of Energy Science Kyoto University Kyoto 606-8501 Japan;
National Institute of Information and Communications Technology koganei Tokyo 184-8795 Japan;
Institute of Laser Engineering Osaka University Suita Osaka 565-0871 Japan;
机译:使用反射模式太赫兹时域光谱研究掺杂铝的ZnO-nGaAs异质结构的太赫兹发射
机译:石墨烯/硅van der wa缺陷的光调,由太赫兹发射光谱观察到的异质结构
机译:Terahertz磁化磁性 - 极性校正,GaN的异质结构中有损的二维电子气体的非识别校正
机译:铁磁异质结构中偏振相关太赫兹发射光谱研究飞秒自旋电流的相干控制
机译:硝基甲烷的太赫兹光谱和激光诱导红外发射光谱,以及用10.6微米波长的二氧化碳激光器探测的半导体表面上激光诱导的载流子的光学特性。
机译:由弹性光电流引起的半导体异质结构的太赫兹脉冲发射
机译:GaN基横向极性异质结构的反转域边界的光电子发射显微镜观察