Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy

摘要

Er,O-codoped GaAs/GalnP double heterostructures (DHS: Er,O) were grown by organometallic vapor phase epitaxy and the intra-4f shell transitions of Er ions were investigated by photoluminescence (PL) measurements. Er,O-codoping was carried out with trisdipivaloylmethanatoerbium (Er(DPM)_3) as an Er source and an addition of O_2 diluted with Ar to a reactor. Er,O-codoped GaAs (GaAs: Er,O) and GaInP layers were all grown at 550℃. In-depth profiles showed a uniform distribution of Er and O along the growth direction in the GaAs : Er,O active layer. The Er concentration in the GaAs:Er,O active layer was evaluated to be about 5 x 10~(17)cm~(-3). In 4.2K PL measurements, DHS: Er,O sample exhibited Er―2O lines and the intensity was approximately three times stronger than that of GaAs: Er,O sample. This suggests that photoexcited carriers confined in the GaAs: Er,O active layer contribute effectively to excitation of Er.