Ultrafast Carrier Capturing In Galnp/er,o-codoped Gaas/gainp Laser Diodes Grown By Organometailic Vapor Phase Epitaxy

摘要

Carrier capturing in GaInP/Er,O-codoped GaAs (GaAs:Er,O)/GaInP laser diodes (LDs) was investigated by means of the threshold current density (J_(th)) of laser emission. The Er-doped LDs showed laser emission of the GaAs band edge at room temperature, and its J_(th) increases with the Er flow rate during the growth. In the dependence of J_(th) on reciprocal cavity length, the effective gain factor of the LDs decreased by the codoping of Er and O. These results reveal that ultrafast capturing of injected carriers at an Er-related trap level is accomplished even in the stimulated emission region of GaAs. The fast capturing process allowed us to observe both the spontaneous intra-4f-shell emission due to Er~(3+) ions at 1.54 μm and the stimulated emission at the GaAs band edge (～840 nm) in the Er-doped LDs.