GaAs emission from GalnP/Er, O-Co doped GaAs/GalnP laser diodes grown by organometallic vapor phase epitaxy

摘要

We have fabricated GaInP/Er, O-codoped GaAs (GaAs:Er,O) /GaInP double heterostructure (DH) laser diodes (LDs) by organometallic vapor phase epitaxy (OMVPE) and investigated their lasing characteristics at GaAs band-edge. Laser emission at the GaAs band-edge was observed from the DH LDs atrnroom temperature. The threshold current density (Jth) increased by doping of Er. The slope of the Jth against the reciprocal cavity length (1/L) also increased by the Er doping, indicating reduced relaxation time of injected carriers in GaAs:Er,O.