Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy

摘要

Er-rclated photolumincscencc (PL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) grown by or-ganometallic vapor phase epitaxy. The GaAs:Er,0 which was slightly doped with Er exhibited both strong Er-related and band-edge luminescence. In the temperature dependence of the Er-related PL intensity, the intensity decreased with in-creasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbou-related PL intensity decreased. This behaviour implies the existence of a Carbon-related nonradiative process in GaAs.