2n-based resistive-random-access-memory (RRA'/> Total Ionizing Dose Effects of 1 Mb RfO<inf>2</inf>-based Resistive-Random-Access-Memory
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Total Ionizing Dose Effects of 1 Mb RfO2-based Resistive-Random-Access-Memory

机译:基于1 Mb RfO 2 的电阻随机访问存储器的总电离剂量效应

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摘要

Total ionizing dose (TID) induced upset errors in HfOn2n-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.
机译:总电离剂量(TID)导致HfOn 2 n的具有1T1R存储单元结构的电阻式随机存取存储器(RRAM)。相同位线上的存取晶体管中的辐射引起的泄漏电流会导致读取决策失败,并在TID辐射实验中观察到位错误。基于1 Mb RRAM的实际电路结构,通过测试键和HSPICE仿真可以验证这一点。

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