Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p-GaN(20 nm)-GaN layers grown on GaN substrates

摘要

Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×10 cm) p-GaN layer placed on top of n-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p-GaN/p-GaN-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (R<;0.3 mΩcm) have been obtained.