Center for Technology Innovation - Electronics, Research Development Group, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunnji-shi, Tokyo 185-8601, Japan;
Center for Technology Innovation - Electronics, Research Development Group, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunnji-shi, Tokyo 185-8601, Japan;
Center for Technology Innovation - Electronics, Research Development Group, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunnji-shi, Tokyo 185-8601, Japan;
Center for Technology Innovation - Electronics, Research Development Group, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunnji-shi, Tokyo 185-8601, Japan;
P-i-n diodes; MOSFET; Schottky diodes; Degradation; Voltage measurement; Temperature measurement; Stacking;
机译:4H-SiC MOSFET体二极管堆叠故障扩展速度的建模
机译:3.3kV SIC MOSFET体二极管堆垛机膨胀速度的建模与评价
机译:4H-SIC引脚二极管中单震撼堆垛机故障扩展的相现场模型
机译:4H-SIC MOSFET体二极管堆叠故障膨胀速度的建模
机译:用于集成电路设计的4H-SiC低压MOSFET的建模和验证。
机译:共聚焦光致发光研究以识别基础堆叠缺陷在半极性InGaN / GaN发光二极管的光学特性中的作用
机译:4H-siC piN二极管,用于在轴外和轴上产生堆垛层错和主动降级