Fabrication and characterization of Si/ #x223C;10-#x03BC;m mesa-etched Si junctions by surface activated bonding

摘要

Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.