Surface-activating-bonding-based low-resistance Si/Ⅲ-Ⅴ junctions

摘要

The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (Ⅰ-Ⅴ) characteristics. The Ⅰ-Ⅴ characteristics of p~+-GaAs~(++)-Si, p~+-GaAs~+-Si, p~+-Si~+-Si, p~(++)-Si~+-InGaP, and p~+-Si~+-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.