Improvement in elecrical properties in SAB-based n#x002B;-Si-4H-SiC junctions by annealing

机译：通过退火改善基于SAP的n + -Si / n-4H-SiC结的电性能

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摘要

The effects of annealing on n-Si-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.

机译：研究了退火对通过表面活化键合形成的n-Si / n-4H-SiC结的影响。通过在较高温度下退火，正向和反向特性均得到改善。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Hayashi T.; Liang J.; Nishida S.; Shigekawa N.; Arai M.;
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作者单位

Graduate School of Engineering Osaka City University Sumiyoshi, Osaka, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Annealing; Bonding; Heterojunctions; Silicon; Silicon carbide; Substrates; Si; SiC; annealing; interface; surface activated bonding;

机译：退火;粘接；异质结；硅;碳化硅;基材； ;碳化硅;退火;接口;表面活化键合；;

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4. Improvement in elecrical properties in SAB-based namp;#x002B;-Si/n-4H-SiC junctions by annealing [C] . Hayashi T., Liang J., Nishida S., Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：通过退火改进基于SAB的N＆＃X002B的电学特性; -SI / N-4H-SIC结
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Improvement in elecrical properties in SAB-based n#x002B;-Si-4H-SiC junctions by annealing

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