Performance improvement of amorphous silicon germanium single junction solar cell modules by low temperature annealing

摘要

The performances of p-i-n amorphous silicon germanium (a-SiGe:H) solar cell modules were investigated post annealing at different temperatures. When the annealing temperature is 190 ℃, the best performance of solar cell modules is obtained. The efficiency of solar cell modules is improved from 5.11% to 7.91%. The enhancement in quantum efficiency spectra at long wavelength post annealing may be attributable to there being significantly less absorption in intrinsic layer. The microstructural properties of the a-SiGe:H thin films are investigated post annealing at different temperatures. The results show that the low temperature annealing process leads to the improvement in the film microstructure.