Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

摘要

This paper describes gate voltage dependence of channel length modulation for Ge p-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that Ge p-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VGS dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VGS dependence of λ is essential in simulation of the current voltage characteristics for Ge p-channel MOSFETs.