Shallow junction and contact realization by diffusion of heavily doped polycrystalline-germanium for Ge devices

摘要

In conclusion, a unique method to achieve high quality shallow n+/p junction by out-diffusion of phosphorus from poly-Ge has been demonstrated. The technology and key issues of poly-Ge deposition by LPCVD is presented. Results shown from diode I–V characteristics indicate feasibility of poly-Ge used for junction and contact realization.