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Area and power efficient 4-bit comparator design by using 1-bit full adder module

机译:通过使用1位全加法器模块实现面积和功耗高效的4位比较器设计

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In this paper an area and power efficient 56T 4-bit comparator design has been presented by using GDI technique. The proposed 4-bit comparator design consist of 28 NMOS and 28 PMOS. A GDI full adder module has been used to design this comparator which consumes less area and power at 120 nm as compared to previous full adder designs. The proposed 4-bit comparator design is based on this area and power efficient 10T full adder module. To get area and power efficiency a centralized full adder module has been used which avoid cascade implementation of XOR module to get sum and carry output. Full adder modules outputs have been used for the generation of output of 4-bit comparator designs. The proposed 4-bit GDI comparator has been designed and simulated using DSCH 3.1 and Microwind 3.1 on 120nm. For proposed design Power and current variation with respect to the supply voltage has been performed on BSIM-4 using 120nm technology. Results show that Area of proposed 4-bit comparator design is 1320.3μm on 120nm technology. At 1.2V input supply voltage the proposed 4-bit GDI comparator consumes 13.739μW power at BSIM-4. At 1.2V proposed GDI 4-bit comparator has shown improvement of 6.3% in terms of area and 69.42% in power as compared to the PTL 4- bit comparator.
机译:本文利用GDI技术提出了一种面积和功率效率较高的56T 4位比较器设计。拟议的4位比较器设计包括28个NMOS和28个PMOS。已使用GDI全加法器模块设计此比较器,与以前的全加法器设计相比,该比较器在120 nm处消耗的面积和功率更少。拟议的4位比较器设计基于该区域和省电的10T全加法器模块。为了获得面积和功率效率,使用了集中式全加法器模块,该模块避免了XOR模块的级联实现以求和并进行输出。完整的加法器模块输出已用于生成4位比较器设计的输出。建议的4位GDI比较器已经在120nm上使用DSCH 3.1和Microwind 3.1进行了设计和仿真。对于建议的设计,已经使用120nm技术在BSIM-4上进行了相对于电源电压的功率和电流变化。结果表明,在120nm工艺下,拟议的4位比较器设计的面积为1320.3μm。在1.2V输入电源电压下,建议的4位GDI比较器在BSIM-4处消耗13.739μW的功率。与PTL 4位比较器相比,建议的GDI 4位比较器在1.2V电压下的面积改进了6.3%,功率改进了69.42%。

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