Bias dependence of total dose effects in the irradiated EEPROM devices

摘要

Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper. Three biases, concluded with NONE bias, Zero bias and Work bias, were used in EEPROM devices with “1” state and "0" state in this paper. It was indicated that the threshold voltage shift negatively as total dose increased in EEPROM devices with "1" state and the threshold voltage shift positively as total dose increased in EEPROM devices with "0" state, and the Work bias was the worst irradiation bias regardless of "1" state or "0" state.