CMOS DEVICES HARDENED AGAINST TOTAL DOSE RADIATION EFFECTS

摘要

A CMOS or NMOS device (10) has one or more n-channel FET's (12) disposed on a substrate (20), the device (10) being resistant to total dose radiation failures, the device (10) further including a negative voltage source (22), for applying a steady negative back bias to the substrate of the n channel FET's (12) to mitigate leakage currents in the device (10), thereby mitgating total dose radiation effects. A method for operating a CMOS or NMOS device (10) to resist total dose radiation failures, the device (10) having one or more n channel FET's disposed on a substrate (20), has the steps: (a) disposing CMOS or NMOS device (10) in a radiation environment, the radiation environment delivering a dose on the order of tens or hundreds of krad (Si) over the period of use of the CMOS device (10); and (b) applying a negative back bias to the substrate (20) of the NMOSFET's (10), at a voltage for mitgating leakage currents about the n channel FET's (12).