High sensing performance of fluorinated HfO2 membrane by low damage CF4 plasma treatment for K^#x002B; detections

摘要

A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K⁺ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF4 plasma, the sensitivity significantly improved. The reasons were the high polarization induced by fluorine atoms and elimination of plasma damage.