首页> 外文会议>2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits >Advanced transient thermoreflectance 2D imaging for integrated circuit sub-micron defect detection and thermal analysis
【24h】

Advanced transient thermoreflectance 2D imaging for integrated circuit sub-micron defect detection and thermal analysis

机译:用于集成电路亚微米缺陷检测和热分析的高级瞬态热反射二维成像

获取原文
获取原文并翻译 | 示例

摘要

Transient thermoreflectance 2D thermal imaging is rapidly proving to be an effective technique for meeting the thermal analysis challenges inherent with today's advanced high speed integrated circuits. Using near infrared light illumination is particularly suitable for the thermal imaging of flip chip mounted devices and silicon substrate chips. High speed transient imaging reveals the timing of heating the spots in the circuit to identify if it is designed or unintended heating. Time-dependent unusual thermal signals provide the information of the depth location of a failure by knowing the time delay underneath the opaque layers.
机译:瞬态热反射2D热成像已迅速证明是一种有效的技术,可以解决当今先进的高速集成电路固有的热分析挑战。使用近红外光照明特别适用于倒装芯片安装的设备和硅基板芯片的热成像。高速瞬态成像显示了加热电路中斑点的时间,以识别电路是设计加热还是意外加热。与时间有关的异常热信号通过了解不透明层下面的时间延迟来提供故障深度位置的信息。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号