Intrinsic Class-F RF GaN power amplifier with a commercial transistor based on a modified “hybrid” approach

摘要

This paper presents an intrinsic high efficiency Class-F power amplifier with a commercial packaged transistor (CGH55015F from Cree). A recently proposed “hybrid” approach for PA design is adopted with modification. The current generator characteristic is extracted from low frequency simulation. The designed power amplifier achieves 79.2% power added efficiency (PAE) at 1 GHz with 40.3 dBm output power.