Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT

摘要

Two critical processes within the gate module of GaN-based MOS-HEMT with significant impact on device robustness and performance were identified and are presented in this paper. Specifically, data highlighting the impact of the number of cycles of the atomic layer etching of the AlGaN barrier to recess the gate region and the sequence of the gate dielectric anneal step on device performance are discussed. The optimization of these two critical steps enabled the implementation of a 50A/600V with an off-state leakage current of 455 μA at 600V and on-state resistance of 41mΩ at VGS=2.5V.