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Advancing high performance heterogeneous integration through die stacking

机译:通过芯片堆叠推进高性能异构集成

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This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities.
机译:本文介绍了业界第一个异构的堆叠式硅互连(SSI)FPGA系列(3D集成)。每个设备均采用低温共烧陶瓷(LTCC)封装,以实现最佳信号完整性。在封装内部,异构IC堆栈可提供高达2.78Tb / s的收发器带宽。所产生的带宽约为单片解决方案可达到的带宽的三倍。异类IC堆栈安装在带有硅通孔(TSV)的无源硅中介层上,包括具有13.1 Gb / s收发器的FPGA IC和具有28 Gb / s收发器的专用模拟IC。优化同时在设计的多个方面进行,这对于成功实现3D集成是必不可少的。特别是,本文概述了为了优化28Gb / s系统通道特性而在封装基板材料和中介层电阻率方面做出的选择。这些选择已通过广泛的电气仿真和测试芯片相关性进行了验证。此外,本文还介绍了芯片间互连的设计和时序验证,这是电子设计自动化行业尚未完全解决的领域。本文进一步介绍了3D热机械建模和包装可靠性分析。进行建模以解决封装共面性问题和中介层施加到有源管芯,低k介电材料,微凸点和C4附着物上的应力。结果表明,异质堆叠硅(3D)集成是构建超出当前单片功能的超高带宽多芯片设备的可靠方法。

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