Simulation study of single event effect for different N-well and Deep-N-well doping in 65nm triple-well CMOS devices

摘要

In this paper, single event effect (SEE) for different N-well and Deep N-well doping in triple-well process is studied by TCAD simulations. Charge collection in combinational circuits and charge sharing in SRAM cells are discussed in 65 nm triple-well CMOS technology. The results showed that devices with different doping have different ability of charge collection and charge sharing. Heavy ion strike induce single transistor DoublePulses are observed, for the doping of 1×10¹⁸ cm⁻³ and 5×10¹⁸ cm⁻³. Single event upset (SEU) recovery is also discussed for different doping in SRAM cells.