Photoluminescence peak wavelength behavior and luminescent efficiency of InAs/InGaAsP/InP quantum dots structure

摘要

We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak wavelength and the luminescent efficiency. The polarization of the excitation light was changed between the p-polarization and the s-polarization. We analyzed the incident angle dependence of the PL peak shift and that of the luminescent efficiency for the each polarization. From the results, we estimated that the temperature change due to the phonon emission affected the PLspectra for the p-polarization.