Channel length-dependent series resistance?

摘要

A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a–f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.