A reduced surface current LDMOS with stronger ESD robustness

摘要

A novel reduced surface current LDMOS structure is proposed, whose current flow is analyzed by theoretical analysis and numerical simulation. Compared to conventional LDMOS, it can restrain the surface current crowding effect under ESD stress. The TLP measured results confirms that the novel structure shows no soft leakage phenomenon, and its current discharge ability is more than four times of the conventional one.