Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness

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• 来源
  《中国物理：英文版》 |2021年第6期|587-592|共6页
• 作者

  Jie Xu; Nai-Long He; Hai-Lian Liang; Sen Zhang; Yu-De Jiang; Xiao-Feng Gu;

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• 作者单位

  Engineering Research Center of IoT Technology Applications (Ministry of Education) Department of Electronic Engineering Jiangnan University Wuxi 214122 China;

  Technology Development Department CSMC Technologies Corporation Wuxi 214061 China;

  Engineering Research Center of IoT Technology Applications (Ministry of Education) Department of Electronic Engineering Jiangnan University Wuxi 214122 China;

  Technology Development Department CSMC Technologies Corporation Wuxi 214061 China;

  Engineering Research Center of IoT Technology Applications (Ministry of Education) Department of Electronic Engineering Jiangnan University Wuxi 214122 China;

  Engineering Research Center of IoT Technology Applications (Ministry of Education) Department of Electronic Engineering Jiangnan University Wuxi 214122 China;

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• 正文语种 eng
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