首页> 外文会议>2011 IEEE International Electron Devices Meeting >Si/Si1−xGex nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit
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Si/Si1−xGex nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit

机译:Si / Si 1-x Ge x 纳米柱超晶格太阳能电池:一种克服肖克利-奎塞尔极限的新型纳米结构太阳能电池

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摘要

We propose a novel Si/Si1−xGex nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10−10 s to 2× 10−8 s by barrier height engineering of the Si/Si1−xGex superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.
机译:我们提出了一种新颖的Si / Si 1-x Ge x 纳米柱超晶格太阳能电池,首次实现了量子限制,光捕获,增加的寿命和有效的载流子提取。通过采用混合纳米柱阵列结构,平均反射率低至3.2%。通过Si / Si 1-x <的势垒高度工程,俄歇复合寿命从4×10 −10 s显着增加到2×10 −8 s / inf> Ge x 超晶格。预计这两种技术会将太阳能电池效率从23%提高到35%。我们的结果表明有可能克服常规硅太阳能电池的理论极限(Shockley-Queisser)(30%)。

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