We propose a novel Si/Si1−xGex nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10−10 s to 2× 10−8 s by barrier height engineering of the Si/Si1−xGex superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.
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机译：我们提出了一种新颖的Si / Si 1-X / ING> GE X 纳米池超晶格太阳能电池，使得第一次实现量子限制，光捕获，增加的寿命和有效的载体提取。通过采用混合纳米玻璃阵列结构，实现了低至3.2％的平均反射率。螺旋钻重组寿命从SI / Si 1-x的屏障高度工程从4×10 -10 -10到2×10 -8秒显着增加到2×10 -8 s。 / INF> GE X 超晶格。预计这两种技术将从23％提高太阳能电池效率至35％。我们的结果表明，克服了传统Si太阳能电池的理论（Shockley-equisser）限制（30％）的可能性。
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