An ultimate planar MOS transistor for high-performance applications based on classical and modern techniques

摘要

An ultimate n-shaped source/drain (π-S/D) metal-oxide semiconductor (MOS) transistor is proposed in this paper. The method used to fabricate the proposed π-S/D transistor is based on both the classical and modern techniques (such as, Si-SiGe epitaxial growth, selective SiGe removal, etc.) that can be controllable and repeatable. Also, a new and simple process without the need of an additional mask to achieve the self-aligned (SA) π-S/D structure is demonstrated and its preliminary characteristics are investigated through three dimensional (3D) numerical simulations.