Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics

摘要

In this paper a complete comparison between Copper (Cu) gate and Nickel-Gold (Ni/Au) gate passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) is presented. DC and Radio Frequency (RF) performance was compared in order to evaluate the behaviour of the two Schottky contacts in the standard HEMT structure. From the obtained data a critical drain current collapse was observed in the Cu-gate devices, with detrimental effects on the RF performance, while the Ni/An-gate performed nicely both during pulsed I-V and RF measurements. An investigation on the drain current transients and on I_D - V_(GS) characteristics, obtained by pulsed signals showed that an acceptor trap at the Cu/AlGaN interface, with activation energy of about 0.43 eV, could be responsible for the Cu-gate HEMT poorer performance. The results suggest that a detailed investigation on surface treatments, gate metal quality and deposition methods is needed in order to fabricate Cu-gate GaN HEMTs.