HiSIM-SOI: Complete Surface-Potential-Based Fully-Depleted SOI-MOSFET Model for Circuit Simulation

摘要

The circuit simulation model for fully-depleted SOI-MOSFET is developed based on the surface-potential description considering the potential distribution vertical to the channel and parallel to the surface explicitly. Besides the comparison to measured I-V data, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The increased carrier concentration in SOI-MOSFET causes enhanced 1/f noise in comparison to bulk MOSFETs.