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3D Wafer Level Packaging Approach Towards Cost Effective Low Loss High Density 3D Stacking

机译:3D晶圆级封装方法可实现具有成本效益的低损耗高密度3D堆叠

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摘要

It is clear that the further evolution of microelectronic technology and electronics systems will increasingly requirire 3D interconnect technologies. Depending on the applications different 3D-interconnect densities will be required. In this paper we have listed a number of 3D technologies (3D-SIP 3D-WLP, 3D-SIC) that can be deal with these different densities in a cost effective way. Further, we have focused on the realization of 3D-WLP through-Si vias. IMEC has developed a new approach of making 3D through-Si vias a potential lower cost and with improved electrical and thermon mechnical performance by using partial Cu plating process and conformal polymer dielectric coating.
机译:显然,微电子技术和电子系统的进一步发展将越来越需要3D互连技术。根据应用,将需要不同的3D互连密度。在本文中,我们列出了许多3D技术(3D-SIP 3D-WLP,3D-SIC),它们可以以经济有效的方式处理这些不同的密度。此外,我们专注于3D-WLP直通硅通孔的实现。 IMEC已经开发出一种新的方法,可以通过使用部分Cu电镀工艺和共形聚合物电介质涂层,以更低的成本制造3D直通硅通孔,并具有改进的电气和热机械性能。

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