Numerical Simulation and Analysis of Voltage Controlling N~+-N-P~+ Model For BJMOSFET's DC Characteristics

摘要

A new power device, the Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistors (BJMOSFET), has been proposed. Based on the numerical and analytical method, the voltage controlling N~+-N-P~+ model for BJMOSFET's DC characteristics has been obtained. Appling the software package of Mathematic, we have simulated both the voltage transfer and the voltage output characteristically graphs of BJMOSFET. Simulation results indicate that the BJMOSFET has a larger current density about 30-40% than the power MOSFET under the same operating conditions and structure parameters, only that the threshold voltage increases a little.