Characterization of a Thick Film Microwave Device (PART I)

摘要

Recent improvements in materials and processing technologies have dramatically increased the frequency range where ceramic thick film circuits can be utilized. Coupled with inherent advantages of thick film technology, i.e. low manufacturing cost, multi-layering capability, and relative insensitivity to substrate surface characteristics, such improvements have resulted in circuits that are penetrating the domain which was previously reserved for thin film technology on polished substrate. In part one of this work proof of concept in the conversion of a thin film microwave amplifier to a five metal layer thick film circuit is attempted. Material and processing strength and limitations are described. The performance characteristics of the substrate are presented and compared to those of the interconnect model. Subsequent work will attempt to extend the operational frequency by incorporating photo lithographic technique to improve the signal layer definition.