Off-State Gate Leakage Current in N-Channel MOSFET's with Gate Dielectrics Prepared by Different Techniques

摘要

Off-state gate current of n-channel MOSFET's with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism.