Temperature induced instability of passivation-free amorphous indium zinc oxide (a-IZO) thin film transistor

摘要

We compared the instability of the temperature and bias temperature stress on the electrical device of amorphous In-Zn oxide (a-IZO) thin film transistor (TFT). Thermal stress conditions were chosen from 293K to 398K, whereas the thermal activation energy can be calculated as a function gate voltage. And then, bias temperatue stress conditions were on-current state (a drain current of 3μA at V_(DS) = 10 V) of TFT. The thermal activation energy of the a-IZO channel layer was significantly changed by the oxygen partial pressure.