Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

著录项

• 来源
  《中国物理：英文版》 |2015年第7期|461-465|共5页
• 作者

  Qian Hui-Min; Yu Guang; Lu Hai; Wu Chen-Fei; Tang Lan-Feng; Zhou Dong; Ren Fang-Fang;

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• 作者单位

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;

  Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词