LED STRUCTURE AND GAN-BASED SUBSTRATE THEREOF, AND METHOD FOR MANUFACTURING GAN-BASED SUBSTRATE

摘要

An LED structure and a GaN-based substrate thereof, and a method for manufacturing a GaN-based substrate. The GaN-based substrate comprises a patterned substrate (10), which comprises a plurality of recess parts (10a) and a plurality of protrusion parts (10b); a metal Ga layer (12') located at the recess parts (10a); and a second semiconductor layer (13) located on the metal Ga layer (12') and the protrusion parts (10b) exposed from the metal Ga layer (12'), wherein the second semiconductor layer (13) is made of a GaN-based material. When an LED light-emitting structure is formed on a GaN-based substrate, light emitted by the LED light-emitting structure is reflected by a metal Ga layer, and the light can then be emitted from an upper surface or a side surface of the LED light-emitting structure, such that light absorption is reduced, thereby improving the light emission efficiency of the LED light-emitting structure.