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METAL TYPE MOLYBDENUM DISULFIDE QUANTUM DOT-MODIFIED TIN NANOTUBE ARRAY COMPOSITE MATERIAL AND PREPARATION METHOD THEREFOR

机译:金属型二硫化钼量子点修饰的锡纳米管阵列复合材料及其制备方法

摘要

The present invention relates to the technical field of preparation of nanomaterials, and in particular, to a metal type molybdenum disulfide quantum dot-modified TiN nanotube array composite material and a preparation method therefor. The preparation method comprises: (1) using a manual grinding method to grind a large-size semiconductor MoS2 block to obtain the semiconductor MoS2 powder; (2) performing lithium intercalation treatment on the semiconductor MoS2 powder; (3) dispersing the semiconductor MoS2 powder subjected to the lithium intercalation treatment into a solvent, performing ultrasonic treatment, and performing centrifugal separation to obtain a metal type MoS2 quantum dot solution; (4) placing a TiN nanotube array into the metal type MoS2 quantum dot solution, and then sequentially performing ultrasonic treatment, immersing same, and drying same to obtain the metal type MoS2 quantum dot-modified TiN nanotube array composite material. The metal type MoS2 quantum dot-modified TiN nanotube array composite material of the present invention has excellent electrocatalytic performance and stability.
机译:本发明涉及纳米材料制备技术领域,尤其涉及一种金属型二硫化钼量子点修饰的锡纳米管阵列复合材料及其制备方法。该制备方法包括:(1)采用手工研磨的方法研磨大尺寸半导体MoS2块,得到半导体MoS2粉末;(2) 对半导体MoS2粉末进行嵌锂处理;(3) 将经过嵌锂处理的半导体MoS2粉末分散到溶剂中,进行超声波处理,并进行离心分离以获得金属型MoS2量子点溶液;(4) 将锡纳米管阵列置于金属型MoS2量子点溶液中,然后依次进行超声处理、浸泡和干燥,以获得金属型MoS2量子点修饰的锡纳米管阵列复合材料。本发明的金属型MoS2量子点修饰的锡纳米管阵列复合材料具有优异的电催化性能和稳定性。

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